Abrupt and tunable quenching of photoluminescence in ZnO

J. D. McNamara; N. M. Albarakati; M. A. Reshchikov

doi:10.1016/j.jlumin.2016.06.013

Abrupt and tunable quenching of photoluminescence in ZnO

J. D. McNamara, N. M. Albarakati, M. A. Reshchikov

Chemistry and Physics

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17 Scopus citations

Abstract

The abrupt and tunable quenching of photoluminescence (PL) in bulk ZnO samples is reported, a phenomenon which has been previously observed only in GaN and a few phosphorescent materials. ZnO samples grown by the hydrothermal method contain Li defects responsible for the orange luminescence (OL) band with a maximum at 2.0 eV. The Li_Zn acceptor is well studied, but there is some disagreement in the literature on the value of its ionization energy. Here we show that the ionization energy of the Li_Zn acceptor responsible for the OL band is 0.65±0.10 eV. The thermal emission of holes from the Li_Zn acceptor to the valence band and their subsequent capture by unknown nonradiative centers causes the abrupt quenching of PL, the temperature of which is tunable by excitation intensity.

Original language	English (US)
Pages (from-to)	301-306
Number of pages	6
Journal	Journal of Luminescence
Volume	178
DOIs	https://doi.org/10.1016/j.jlumin.2016.06.013
State	Published - Oct 1 2016

Keywords

Li acceptor
Photoluminescence
Thermal quenching
ZnO

ASJC Scopus subject areas

Biophysics
Biochemistry
Chemistry(all)
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.jlumin.2016.06.013

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title = "Abrupt and tunable quenching of photoluminescence in ZnO",

abstract = "The abrupt and tunable quenching of photoluminescence (PL) in bulk ZnO samples is reported, a phenomenon which has been previously observed only in GaN and a few phosphorescent materials. ZnO samples grown by the hydrothermal method contain Li defects responsible for the orange luminescence (OL) band with a maximum at 2.0 eV. The LiZn acceptor is well studied, but there is some disagreement in the literature on the value of its ionization energy. Here we show that the ionization energy of the LiZn acceptor responsible for the OL band is 0.65±0.10 eV. The thermal emission of holes from the LiZn acceptor to the valence band and their subsequent capture by unknown nonradiative centers causes the abrupt quenching of PL, the temperature of which is tunable by excitation intensity.",

keywords = "Li acceptor, Photoluminescence, Thermal quenching, ZnO",

author = "McNamara, {J. D.} and Albarakati, {N. M.} and Reshchikov, {M. A.}",

note = "Funding Information: The work was supported by the National Science Foundation ( DMR-1410125 ). Publisher Copyright: {\textcopyright}.",

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doi = "10.1016/j.jlumin.2016.06.013",

language = "English (US)",

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TY - JOUR

T1 - Abrupt and tunable quenching of photoluminescence in ZnO

AU - McNamara, J. D.

AU - Albarakati, N. M.

AU - Reshchikov, M. A.

N1 - Funding Information: The work was supported by the National Science Foundation ( DMR-1410125 ). Publisher Copyright: ©.

PY - 2016/10/1

Y1 - 2016/10/1

N2 - The abrupt and tunable quenching of photoluminescence (PL) in bulk ZnO samples is reported, a phenomenon which has been previously observed only in GaN and a few phosphorescent materials. ZnO samples grown by the hydrothermal method contain Li defects responsible for the orange luminescence (OL) band with a maximum at 2.0 eV. The LiZn acceptor is well studied, but there is some disagreement in the literature on the value of its ionization energy. Here we show that the ionization energy of the LiZn acceptor responsible for the OL band is 0.65±0.10 eV. The thermal emission of holes from the LiZn acceptor to the valence band and their subsequent capture by unknown nonradiative centers causes the abrupt quenching of PL, the temperature of which is tunable by excitation intensity.

AB - The abrupt and tunable quenching of photoluminescence (PL) in bulk ZnO samples is reported, a phenomenon which has been previously observed only in GaN and a few phosphorescent materials. ZnO samples grown by the hydrothermal method contain Li defects responsible for the orange luminescence (OL) band with a maximum at 2.0 eV. The LiZn acceptor is well studied, but there is some disagreement in the literature on the value of its ionization energy. Here we show that the ionization energy of the LiZn acceptor responsible for the OL band is 0.65±0.10 eV. The thermal emission of holes from the LiZn acceptor to the valence band and their subsequent capture by unknown nonradiative centers causes the abrupt quenching of PL, the temperature of which is tunable by excitation intensity.

KW - Li acceptor

KW - Photoluminescence

KW - Thermal quenching

KW - ZnO

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VL - 178

SP - 301

EP - 306

JO - Journal of Luminescence

JF - Journal of Luminescence

ER -

Abrupt and tunable quenching of photoluminescence in ZnO

Abstract

Keywords

ASJC Scopus subject areas

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