Characteristics of Y-Ba-Cu-O superconductor films on GaAs with an Al 2O3 or AlGaO3 buffer layer

J. Shewchun; Yi Chen; J. S. Hölder; C. Uher

doi:10.1063/1.104789

Characteristics of Y-Ba-Cu-O superconductor films on GaAs with an Al ₂O₃ or AlGaO₃ buffer layer

J. Shewchun
, Yi Chen
, J. S. Hölder
, C. Uher

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

By depositing a buffer layer of Al₂O₃ on GaAs, we have been able to laser ablate a superconducting film of Y₁Ba ₂Cu₃O_7-x overtop. The onset of superconductivity is 92 K and zero resistance is observed at 80 K in a structure with a suitably annealed Al₂O₃ film which is converted to AlGaO₃. Both the Al₂O₃-GaAs and the Al ₂O₃-Y₁Ba₂Cu₃O _7-x interfaces are remarkably well preserved with virtually no interdiffusion or interaction. The Al₂O₃ or homolog AlGaO₃ film also prevents decomposition of the GaAs at the deposition temperature of 730°C.

Original language	English (US)
Pages (from-to)	2704-2706
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	23
DOIs	https://doi.org/10.1063/1.104789
State	Published - 1991
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Characteristics of Y-Ba-Cu-O superconductor films on GaAs with an Al 2O3 or AlGaO3 buffer layer",

abstract = "By depositing a buffer layer of Al2O3 on GaAs, we have been able to laser ablate a superconducting film of Y1Ba 2Cu3O7-x overtop. The onset of superconductivity is 92 K and zero resistance is observed at 80 K in a structure with a suitably annealed Al2O3 film which is converted to AlGaO3. Both the Al2O3-GaAs and the Al 2O3-Y1Ba2Cu3O 7-x interfaces are remarkably well preserved with virtually no interdiffusion or interaction. The Al2O3 or homolog AlGaO3 film also prevents decomposition of the GaAs at the deposition temperature of 730°C.",

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year = "1991",

doi = "10.1063/1.104789",

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publisher = "American Institute of Physics",

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T1 - Characteristics of Y-Ba-Cu-O superconductor films on GaAs with an Al 2O3 or AlGaO3 buffer layer

AU - Shewchun, J.

AU - Chen, Yi

AU - Hölder, J. S.

AU - Uher, C.

PY - 1991

Y1 - 1991

N2 - By depositing a buffer layer of Al2O3 on GaAs, we have been able to laser ablate a superconducting film of Y1Ba 2Cu3O7-x overtop. The onset of superconductivity is 92 K and zero resistance is observed at 80 K in a structure with a suitably annealed Al2O3 film which is converted to AlGaO3. Both the Al2O3-GaAs and the Al 2O3-Y1Ba2Cu3O 7-x interfaces are remarkably well preserved with virtually no interdiffusion or interaction. The Al2O3 or homolog AlGaO3 film also prevents decomposition of the GaAs at the deposition temperature of 730°C.

AB - By depositing a buffer layer of Al2O3 on GaAs, we have been able to laser ablate a superconducting film of Y1Ba 2Cu3O7-x overtop. The onset of superconductivity is 92 K and zero resistance is observed at 80 K in a structure with a suitably annealed Al2O3 film which is converted to AlGaO3. Both the Al2O3-GaAs and the Al 2O3-Y1Ba2Cu3O 7-x interfaces are remarkably well preserved with virtually no interdiffusion or interaction. The Al2O3 or homolog AlGaO3 film also prevents decomposition of the GaAs at the deposition temperature of 730°C.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Characteristics of Y-Ba-Cu-O superconductor films on GaAs with an Al ₂O₃ or AlGaO₃ buffer layer

Abstract

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