Devices dictate control of implant-beam incident angle

U. Jeong, J. Y. Jin, S. Mehta

Research output: Contribution to specialist publicationArticle

12 Scopus citations


As device scaling continues, precise control of dopant placement becomes a critical requisite in the fabrication of high-performance devices. Here we compare the performance of single-wafer parallel-beam implanters to traditional batch implanters, with spinning disks, looking at beam incident angle control. There are several sources of beam incident angle variation in batch implanters, depending upon the scanning system and beam delivery mechanism. The consequences of these sources of angular variations are crucial in high-performance device fabrication.

Original languageEnglish (US)
Specialist publicationSolid State Technology
StatePublished - Oct 1 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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