TY - GEN
T1 - Epitaxial graphene (EG)/SiC based Schottky emitter bipolar phototransistors for UV detection and effect of hydrogen intercalation on device I-V characteristics
AU - Chava, Venkata S.N.
AU - Chandrashekhar, M. V.S.
AU - Daniels, Kevin M.
AU - Barker, Bobby G.
AU - Greytak, Andrew B.
N1 - Publisher Copyright:
© 2016 IEEE.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/1/5
Y1 - 2017/1/5
N2 - Wideband gap semiconductor materials such as SiC and GaN are popular for UV detection applications. Also, epitaxial growth of graphene on SiC is suitable for the development of large area electronic and optoelectronic devices based on EG/SiC junctions. Epitaxial graphene(EG) grown on SiC forms a Schottky junction with highly asymmetric barrier for both electrons and holes. We have previously reported a high gain bipolar photo-transistor for UV detector applications. In this present study, we report the current-voltage (I-V) and gain characteristics of these devices before and after hydrogen intercalation process step. It is observed that the gain has decreased after intercalation which is possibly due to reduced minority carrier injection efficiency. Additionally, the device I-V characteristics are measured under sub bandgap blue laser excitation and from these results, the UV-Visible rejection ratio is estimated to be about 4500.
AB - Wideband gap semiconductor materials such as SiC and GaN are popular for UV detection applications. Also, epitaxial growth of graphene on SiC is suitable for the development of large area electronic and optoelectronic devices based on EG/SiC junctions. Epitaxial graphene(EG) grown on SiC forms a Schottky junction with highly asymmetric barrier for both electrons and holes. We have previously reported a high gain bipolar photo-transistor for UV detector applications. In this present study, we report the current-voltage (I-V) and gain characteristics of these devices before and after hydrogen intercalation process step. It is observed that the gain has decreased after intercalation which is possibly due to reduced minority carrier injection efficiency. Additionally, the device I-V characteristics are measured under sub bandgap blue laser excitation and from these results, the UV-Visible rejection ratio is estimated to be about 4500.
KW - Epitaxial graphene(EG)
KW - Photo-transistor
KW - Silicon Carbide(SiC)
KW - UV detector
UR - http://www.scopus.com/inward/record.url?scp=85010966984&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85010966984&partnerID=8YFLogxK
U2 - 10.1109/ICSENS.2016.7808587
DO - 10.1109/ICSENS.2016.7808587
M3 - Conference contribution
AN - SCOPUS:85010966984
T3 - Proceedings of IEEE Sensors
BT - IEEE Sensors, SENSORS 2016 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 15th IEEE Sensors Conference, SENSORS 2016
Y2 - 30 October 2016 through 2 November 2016
ER -