HVPE GaN with low concentration of point defects for power electronics

M. A. Reshchikov, J. D. McNamara, A. Usikov, H. Helava, Y. Makarov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


We have studied photoluminescence (PL) from undoped GaN films grown by HVPE technique on sapphire. Several defect-related PL bands are observed in the low-temperature PL spectrum. The concentrations of the defects responsible for these PL bands are determined from the dependence of PL intensity on excitation intensity. The RL band with a maximum at 1.8 eV is often the dominant PL band in HVPE GaN. It is caused by an unknown defect with the concentration of up to ~1017 cm-3. The concentrations of defects responsible for other defect- related PL bands rarely exceed 1015 cm-3.

Original languageEnglish (US)
Title of host publicationWide-Bandgap Materials for Solid-State Lighting and Power Electronics
EditorsG. Meneghesso, T. Takeuchi, R. Kaplar, B. Ozpineci
PublisherMaterials Research Society
Number of pages6
ISBN (Electronic)9781510806160
StatePublished - 2015
Event2014 MRS Fall Meeting - Boston, United States
Duration: Nov 30 2014Dec 5 2014

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2014 MRS Fall Meeting
Country/TerritoryUnited States

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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