@inproceedings{6a34e3984b6f4872a515e91591f05800,
title = "HVPE GaN with low concentration of point defects for power electronics",
abstract = "We have studied photoluminescence (PL) from undoped GaN films grown by HVPE technique on sapphire. Several defect-related PL bands are observed in the low-temperature PL spectrum. The concentrations of the defects responsible for these PL bands are determined from the dependence of PL intensity on excitation intensity. The RL band with a maximum at 1.8 eV is often the dominant PL band in HVPE GaN. It is caused by an unknown defect with the concentration of up to ~1017 cm-3. The concentrations of defects responsible for other defect- related PL bands rarely exceed 1015 cm-3.",
author = "Reshchikov, {M. A.} and McNamara, {J. D.} and A. Usikov and H. Helava and Y. Makarov",
note = "Publisher Copyright: {\textcopyright} 2015 Materials Research Society.; 2014 MRS Fall Meeting ; Conference date: 30-11-2014 Through 05-12-2014",
year = "2015",
doi = "10.1557/opl.2015.140",
language = "English (US)",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "89--94",
editor = "G. Meneghesso and T. Takeuchi and R. Kaplar and B. Ozpineci",
booktitle = "Wide-Bandgap Materials for Solid-State Lighting and Power Electronics",
address = "United States",
}