Abstract
We have studied ion-implantation damage effects on boron clustering and transient enhanced diffusion (TED) by using polyatomic boron (Bn-, n = 1-3) ion implantation with the same atomic boron dose and energy. This Bn- series implantation can produce different amounts of damage with the same boron as-implanted profile and same amount of excess interstitials, hence a net effect of implantation damage can be extracted. Secondary ion mass spectrometry measurements indicate that for 1 keV boron atomic energy implantation and 10 s 1050 °C rapid thermal annealing, B1- implantation has less TED and less boron-interstitial clustering than B2- and B3- implantation. A boron trapping peak at the SiO2/Si interface is also speculated since the amount of boron trapped is correlated to the size of implanted ions.
Original language | English (US) |
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Pages (from-to) | 574-576 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 76 |
Issue number | 5 |
DOIs | |
State | Published - Jan 31 2000 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)