Study of reverse annealing behaviors of p+/n ultrashallow junction formed using solid phase epitaxial annealing

Jian Yue Jin; Jinning Liu; Ukyo Jeong; Sandeep Mehta; Kevin Jones

doi:10.1116/1.1424279

Study of reverse annealing behaviors of p⁺/n ultrashallow junction formed using solid phase epitaxial annealing

Jian Yue Jin, Jinning Liu, Ukyo Jeong, Sandeep Mehta, Kevin Jones

Radiology and Imaging

Research output: Contribution to journal › Conference article › peer-review

56 Scopus citations

Abstract

The solid phase epitaxial regrowth process and its reverse annealing behavior was studied with a second-step annealing at temperatures ranging from 650 to 950 °centigrade in 1 keV boron and 5 keV boron fluoride implanted wafers. Secondary ion mass spectrometry, four-point probe and transmission electron microscopy were used for dopant diffusion, activation and microstructure analysis. Results indicated that boron deactivation during second-step annealing was correlated with transient enhanced diffusion and end of range defect evolution. Boron fluoride implanted wafer showed slower SPE regrowth rate at 550 °centigrade annealing than boron implanted wafer.

Original language	English (US)
Pages (from-to)	422-426
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	1
DOIs	https://doi.org/10.1116/1.1424279
State	Published - Jan 2002
Event	6th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors - Napa Valley, CA, United States Duration: Apr 22 2001 → Apr 26 2001

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Study of reverse annealing behaviors of p+/n ultrashallow junction formed using solid phase epitaxial annealing",

abstract = "The solid phase epitaxial regrowth process and its reverse annealing behavior was studied with a second-step annealing at temperatures ranging from 650 to 950 °centigrade in 1 keV boron and 5 keV boron fluoride implanted wafers. Secondary ion mass spectrometry, four-point probe and transmission electron microscopy were used for dopant diffusion, activation and microstructure analysis. Results indicated that boron deactivation during second-step annealing was correlated with transient enhanced diffusion and end of range defect evolution. Boron fluoride implanted wafer showed slower SPE regrowth rate at 550 °centigrade annealing than boron implanted wafer.",

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year = "2002",

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doi = "10.1116/1.1424279",

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T1 - Study of reverse annealing behaviors of p+/n ultrashallow junction formed using solid phase epitaxial annealing

AU - Jin, Jian Yue

AU - Liu, Jinning

AU - Jeong, Ukyo

AU - Mehta, Sandeep

AU - Jones, Kevin

PY - 2002/1

Y1 - 2002/1

N2 - The solid phase epitaxial regrowth process and its reverse annealing behavior was studied with a second-step annealing at temperatures ranging from 650 to 950 °centigrade in 1 keV boron and 5 keV boron fluoride implanted wafers. Secondary ion mass spectrometry, four-point probe and transmission electron microscopy were used for dopant diffusion, activation and microstructure analysis. Results indicated that boron deactivation during second-step annealing was correlated with transient enhanced diffusion and end of range defect evolution. Boron fluoride implanted wafer showed slower SPE regrowth rate at 550 °centigrade annealing than boron implanted wafer.

AB - The solid phase epitaxial regrowth process and its reverse annealing behavior was studied with a second-step annealing at temperatures ranging from 650 to 950 °centigrade in 1 keV boron and 5 keV boron fluoride implanted wafers. Secondary ion mass spectrometry, four-point probe and transmission electron microscopy were used for dopant diffusion, activation and microstructure analysis. Results indicated that boron deactivation during second-step annealing was correlated with transient enhanced diffusion and end of range defect evolution. Boron fluoride implanted wafer showed slower SPE regrowth rate at 550 °centigrade annealing than boron implanted wafer.

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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Study of reverse annealing behaviors of p⁺/n ultrashallow junction formed using solid phase epitaxial annealing

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