Abstract
The band bending in a Mg-doped, p-type GaN film grown by hydride vapor phase epitaxy was studied at various temperatures. At 295 K, the band bending in dark was calculated to be approximately -1.5 eV. However, when the sample was heated to 600 K for 1 h in dark before performing a measurement at 295 K, the calculated value of band bending in dark became about -2.0 eV. These results are explained by the fact that increasing the sample temperature exponentially increases the rate at which the band bending restores and allows for a more accurate value of band bending to be measured.
Original language | English (US) |
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Article number | 082104 |
Journal | Applied Physics Letters |
Volume | 101 |
Issue number | 8 |
DOIs | |
State | Published - Aug 20 2012 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)