Treatment of cephalocranial disproportion in shunt-induced slit ventricle syndrome with cranial vault distraction osteogenesis

Maria Helena N. De Lima, Raymond J. Harshbarger, Timothy M. George

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Background: Slit ventricle syndrome (SVS) is a known late complication of shunting procedures. Some patients develop cephalocranial disproportion (CCD) that will require surgical treatment to increase craniocerebral compliance. Methods: We performed cranial vault distraction osteogenesis to treat 2 teenage patients who presented with SVS, increased intracranial pressure and CCD. Bilateral temporo-parieto-occipital craniotomies were performed. Results: Both patients successfully completed distraction and consolidated without the need for bone grafting. Postoperatively, both patients showed an increase in intracranial and intraventricular volume, as well as decreased shunt revisions. One patient had improvement of her headaches, while the other continues to have chronic headaches. Conclusion: Distraction osteogenesis is an option to expand the cranial vault in older children with SVS and CCD, in which the traditional cranial vault expansion would be a challenge and may or may not provide adequate expansion.

Original languageEnglish (US)
Pages (from-to)187-192
Number of pages6
JournalPediatric Neurosurgery
Volume49
Issue number3
DOIs
StatePublished - Jul 2014
Externally publishedYes

Keywords

  • Cephalocranial disproportion
  • Cranial expansion
  • Cranial vault
  • Craniofacial surgery
  • Distraction osteogenesis
  • Headaches
  • Intracranial pressure
  • Slit ventricle syndrome
  • Ventriculoperitoneal shunt

ASJC Scopus subject areas

  • Pediatrics, Perinatology, and Child Health
  • Surgery
  • Clinical Neurology

Fingerprint

Dive into the research topics of 'Treatment of cephalocranial disproportion in shunt-induced slit ventricle syndrome with cranial vault distraction osteogenesis'. Together they form a unique fingerprint.

Cite this