Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn
- M. A. Reshchikov(corresponding author),
- M. Foussekis,
- J. D. McNamara,
- A. Behrends,
- A. Bakin,
- A. Waag
- Virginia Commonwealth University,
- Technical University of Braunschweig
Scholary Output:
Contribution to journal
Article
Peer-reviewAbstract
The optical properties of high-quality GaN co-doped with silicon and zinc are investigated by using temperature-dependent continuous-wave and time-resolved photoluminescence measurements. The blue luminescence band is related to the Zn Ga acceptor in GaN:Si,Zn, which exhibits an exceptionally high absolute internal quantum efficiency (IQE). An IQE above 90 was calculated for several samples having different concentrations of Zn. Accurate and reliable values of the IQE were obtained by using several approaches based on rate equations. The concentrations of the Zn Ga acceptors and free electrons were also estimated from the photoluminescence measurements.
Publication Information
Output type
Scholary Output:
Contribution to journal
Article
Peer-reviewOriginal language
English (US)Article number
073106Journal (Volume, Issue Number)
Journal of Applied Physics (Volume 111, Issue 7)Publication milestones
- Published - 04/01/2012
Publication status
Published - 04/01/2012
ISSN
0021-8979Publication IDs
- Scopus: 84861740300
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1
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0.17
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5
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0.83
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1
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1
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citations
38
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FWCI
9.77
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Author count
6
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Paper percentile
89
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Funding Details
The work was supported by the BMBF under the project “Ephquam.” The authors also thank V. Avrutin and H. Morkoç from VCU for assistance with the Hall effect measurements.