Effects of high-dosage focused electron-beam irradiation at energies ≤ 30 keV on graphene on SiO                         2

J. D. Femi-Oyetoro; K. Yao; K. Roccapriore; P. A. Ecton; R. Tang; J. D. Jones; G. Verbeck; J. M. Perez

doi:10.1016/j.apsusc.2018.10.250

Effects of high-dosage focused electron-beam irradiation at energies ≤ 30 keV on graphene on SiO ₂

J. D. Femi-Oyetoro, K. Yao, K. Roccapriore, P. A. Ecton, R. Tang, J. D. Jones, G. Verbeck, J. M. Perez

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We investigate the effects of focused electron-beam irradiation on exfoliated graphene on SiO ₂ substrates at energies of 1.5, 10 and 30 keV and dosage of 28.8 C/cm ² . Our objective is to understand the mechanism by which wide-area low-energy electron irradiation thins such samples. We test a previously reported mechanism in which the incident electrons produce defects in the graphene, pass through the graphene, and dissociate oxygen from the SiO ₂ underneath. The dissociated oxygen then reacts with graphene, etching it from below. We conclude that although oxygen may play a role in the etching, incident electrons at 1.5, 10 and 30 keV that pass through the graphene do not etch it. We propose wide-area irradiation may dissociate oxygen from the uncovered SiO ₂ substrate surrounding the graphene and produce etching from above.

Original language	English (US)
Pages (from-to)	325-330
Number of pages	6
Journal	Applied Surface Science
Volume	469
DOIs	https://doi.org/10.1016/j.apsusc.2018.10.250
State	Published - Mar 1 2019
Externally published	Yes

Keywords

Electron irradiation
Etching
Graphene

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2018.10.250

Cite this

Femi-Oyetoro, J. D., Yao, K., Roccapriore, K., Ecton, P. A., Tang, R., Jones, J. D., Verbeck, G., & Perez, J. M. (2019). Effects of high-dosage focused electron-beam irradiation at energies ≤ 30 keV on graphene on SiO ₂ Applied Surface Science, 469, 325-330. https://doi.org/10.1016/j.apsusc.2018.10.250

Effects of high-dosage focused electron-beam irradiation at energies ≤ 30 keV on graphene on SiO ₂ . / Femi-Oyetoro, J. D.; Yao, K.; Roccapriore, K. et al.
In: Applied Surface Science, Vol. 469, 01.03.2019, p. 325-330.

Research output: Contribution to journal › Article › peer-review

Femi-Oyetoro, JD, Yao, K, Roccapriore, K, Ecton, PA, Tang, R, Jones, JD, Verbeck, G & Perez, JM 2019, ' Effects of high-dosage focused electron-beam irradiation at energies ≤ 30 keV on graphene on SiO ₂ ', Applied Surface Science, vol. 469, pp. 325-330. https://doi.org/10.1016/j.apsusc.2018.10.250

Femi-Oyetoro JD, Yao K, Roccapriore K, Ecton PA, Tang R, Jones JD et al. Effects of high-dosage focused electron-beam irradiation at energies ≤ 30 keV on graphene on SiO ₂ Applied Surface Science. 2019 Mar 1;469:325-330. doi: 10.1016/j.apsusc.2018.10.250

@article{b642373fa8b5452b95022f8c3107b27f,

title = " Effects of high-dosage focused electron-beam irradiation at energies ≤ 30 keV on graphene on SiO 2 ",

abstract = " We investigate the effects of focused electron-beam irradiation on exfoliated graphene on SiO 2 substrates at energies of 1.5, 10 and 30 keV and dosage of 28.8 C/cm 2 . Our objective is to understand the mechanism by which wide-area low-energy electron irradiation thins such samples. We test a previously reported mechanism in which the incident electrons produce defects in the graphene, pass through the graphene, and dissociate oxygen from the SiO 2 underneath. The dissociated oxygen then reacts with graphene, etching it from below. We conclude that although oxygen may play a role in the etching, incident electrons at 1.5, 10 and 30 keV that pass through the graphene do not etch it. We propose wide-area irradiation may dissociate oxygen from the uncovered SiO 2 substrate surrounding the graphene and produce etching from above.",

keywords = "Electron irradiation, Etching, Graphene",

author = "Femi-Oyetoro, {J. D.} and K. Yao and K. Roccapriore and Ecton, {P. A.} and R. Tang and Jones, {J. D.} and G. Verbeck and Perez, {J. M.}",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2019",

month = mar,

day = "1",

doi = "10.1016/j.apsusc.2018.10.250",

language = "English (US)",

volume = "469",

pages = "325--330",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - Effects of high-dosage focused electron-beam irradiation at energies ≤ 30 keV on graphene on SiO 2

AU - Femi-Oyetoro, J. D.

AU - Yao, K.

AU - Roccapriore, K.

AU - Ecton, P. A.

AU - Tang, R.

AU - Jones, J. D.

AU - Verbeck, G.

AU - Perez, J. M.

PY - 2019/3/1

Y1 - 2019/3/1

N2 - We investigate the effects of focused electron-beam irradiation on exfoliated graphene on SiO 2 substrates at energies of 1.5, 10 and 30 keV and dosage of 28.8 C/cm 2 . Our objective is to understand the mechanism by which wide-area low-energy electron irradiation thins such samples. We test a previously reported mechanism in which the incident electrons produce defects in the graphene, pass through the graphene, and dissociate oxygen from the SiO 2 underneath. The dissociated oxygen then reacts with graphene, etching it from below. We conclude that although oxygen may play a role in the etching, incident electrons at 1.5, 10 and 30 keV that pass through the graphene do not etch it. We propose wide-area irradiation may dissociate oxygen from the uncovered SiO 2 substrate surrounding the graphene and produce etching from above.

AB - We investigate the effects of focused electron-beam irradiation on exfoliated graphene on SiO 2 substrates at energies of 1.5, 10 and 30 keV and dosage of 28.8 C/cm 2 . Our objective is to understand the mechanism by which wide-area low-energy electron irradiation thins such samples. We test a previously reported mechanism in which the incident electrons produce defects in the graphene, pass through the graphene, and dissociate oxygen from the SiO 2 underneath. The dissociated oxygen then reacts with graphene, etching it from below. We conclude that although oxygen may play a role in the etching, incident electrons at 1.5, 10 and 30 keV that pass through the graphene do not etch it. We propose wide-area irradiation may dissociate oxygen from the uncovered SiO 2 substrate surrounding the graphene and produce etching from above.

KW - Electron irradiation

KW - Etching

KW - Graphene

UR - http://www.scopus.com/inward/record.url?scp=85056217367&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85056217367&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2018.10.250

DO - 10.1016/j.apsusc.2018.10.250

M3 - Article

AN - SCOPUS:85056217367

SN - 0169-4332

VL - 469

SP - 325

EP - 330

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Effects of high-dosage focused electron-beam irradiation at energies ≤ 30 keV on graphene on SiO ₂

Abstract

Keywords

ASJC Scopus subject areas

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Cite this

Effects of high-dosage focused electron-beam irradiation at energies ≤ 30 keV on graphene on SiO 2

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

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Fingerprint

Cite this

Effects of high-dosage focused electron-beam irradiation at energies ≤ 30 keV on graphene on SiO ₂