Higher than 90% internal quantum efficiency of photoluminescence in GaN: Si,Zn

M. A. Reshchikov; J. D. Mcnamara; A. Behrends; M. S. Mohajerani; A. Bakin; A. Waag

doi:10.1002/pssc.201200664

Higher than 90% internal quantum efficiency of photoluminescence in GaN: Si,Zn

M. A. Reshchikov, J. D. Mcnamara, A. Behrends, M. S. Mohajerani, A. Bakin, A. Waag

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2 Scopus citations

Abstract

Photoluminescence (PL) from high-quality GaN codoped with silicon and zinc was investigated in detail. The internal quantum efficiency (IQE) of PL was determined from the analysis of the dependencies of the PL intensity on the excitation intensity and temperature, and the simulation of these dependencies with a phenomenological model based on rate equations. The model reproduces an important phenomenon: the quenching of a recombination channel with a high IQE causes a rise in efficiency of all the other PL bands. Quantitative analysis of this phenomenon allows one to determine reliably the absolute IQE of PL. The absolute IQE of the PL in GaN co-doped with Si and Zn exceeds 90%, with the largest contribution coming from the blue luminescence band associated with the Zn_Ga acceptor.

Original language	English (US)
Pages (from-to)	507-510
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	10
Issue number	3
DOIs	https://doi.org/10.1002/pssc.201200664
State	Published - Mar 1 2013
Externally published	Yes

Keywords

GaN
Photoluminescence
Quantum efficiency

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.201200664

Cite this

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title = "Higher than 90% internal quantum efficiency of photoluminescence in GaN: Si,Zn",

abstract = "Photoluminescence (PL) from high-quality GaN codoped with silicon and zinc was investigated in detail. The internal quantum efficiency (IQE) of PL was determined from the analysis of the dependencies of the PL intensity on the excitation intensity and temperature, and the simulation of these dependencies with a phenomenological model based on rate equations. The model reproduces an important phenomenon: the quenching of a recombination channel with a high IQE causes a rise in efficiency of all the other PL bands. Quantitative analysis of this phenomenon allows one to determine reliably the absolute IQE of PL. The absolute IQE of the PL in GaN co-doped with Si and Zn exceeds 90%, with the largest contribution coming from the blue luminescence band associated with the ZnGa acceptor.",

keywords = "GaN, Photoluminescence, Quantum efficiency",

author = "Reshchikov, {M. A.} and Mcnamara, {J. D.} and A. Behrends and Mohajerani, {M. S.} and A. Bakin and A. Waag",

year = "2013",

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doi = "10.1002/pssc.201200664",

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TY - JOUR

T1 - Higher than 90% internal quantum efficiency of photoluminescence in GaN

T2 - Si,Zn

AU - Reshchikov, M. A.

AU - Mcnamara, J. D.

AU - Behrends, A.

AU - Mohajerani, M. S.

AU - Bakin, A.

AU - Waag, A.

PY - 2013/3/1

Y1 - 2013/3/1

N2 - Photoluminescence (PL) from high-quality GaN codoped with silicon and zinc was investigated in detail. The internal quantum efficiency (IQE) of PL was determined from the analysis of the dependencies of the PL intensity on the excitation intensity and temperature, and the simulation of these dependencies with a phenomenological model based on rate equations. The model reproduces an important phenomenon: the quenching of a recombination channel with a high IQE causes a rise in efficiency of all the other PL bands. Quantitative analysis of this phenomenon allows one to determine reliably the absolute IQE of PL. The absolute IQE of the PL in GaN co-doped with Si and Zn exceeds 90%, with the largest contribution coming from the blue luminescence band associated with the ZnGa acceptor.

AB - Photoluminescence (PL) from high-quality GaN codoped with silicon and zinc was investigated in detail. The internal quantum efficiency (IQE) of PL was determined from the analysis of the dependencies of the PL intensity on the excitation intensity and temperature, and the simulation of these dependencies with a phenomenological model based on rate equations. The model reproduces an important phenomenon: the quenching of a recombination channel with a high IQE causes a rise in efficiency of all the other PL bands. Quantitative analysis of this phenomenon allows one to determine reliably the absolute IQE of PL. The absolute IQE of the PL in GaN co-doped with Si and Zn exceeds 90%, with the largest contribution coming from the blue luminescence band associated with the ZnGa acceptor.

KW - GaN

KW - Photoluminescence

KW - Quantum efficiency

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Higher than 90% internal quantum efficiency of photoluminescence in GaN: Si,Zn

Abstract

Keywords

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